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|
| Thick photosensitive Dielectric |
|
|
| Position of
WPR-Series in Insulation Materials |
| Heat
resistance |
 |
Electrical
properties
(Dielectric constant) |
| Cure temperature |
| Thermal shrink |
Resolution
(aspect ratio) |
|
|
| 1 |
Process |
Conditions |
| WPR-1020 |
WPR-1050 |
WPR-1201 |
| 2 |
Thickness |
3 µm |
6 µm |
20 µm |
| 3 |
Prebake |
110C / 2min |
110C / 3min |
110C / 3min |
| 4 |
Exposure |
200 mJ/cm2
(g, h, i-line) |
600 mJ/cm2 |
1,000mJ/cm2 |
| 5 |
PEB |
110C / 2min |
110C / 3min |
110C / 5min |
| 6 |
Development |
60sec / 2.38wt% TMAH |
60sec / 2.38wt% TMAH |
120sec / 2.38wt% TMAH |
| 7 |
Rinse |
30sec / DI water |
30sec / DI water |
30sec / DI water |
8 |
Pre cure |
- |
- |
- |
| 9 |
Post bake |
190C / 60min |
190C / 60min |
190C / 60min |
Item |
Properties |
Conditions |
| WPR-1020 |
WPR-1050 |
WPR-1201 |
| Glass transition temperature (Tg) |
220 C |
240 C
|
210 C |
TMA method |
| CTE (-65C~150C) |
53 ppm |
53 ppm
|
56 ppm |
TMA method |
| Tensile strength |
72 MPa |
90 MPa
|
90 MPa |
Tension test
5 mm/min
Film thickness ; 50µm |
| Elastic modulus |
2.2 GPa |
2.3 GPa
|
2.2 GPa |
| Elongation |
6.0 % |
6.0 %
|
6.4 % |
| Water absorption |
1.4 % |
1.3 %
|
1.5 % |
23C/24h in water |
| Volume resistivity |
2.0x1015 Wcm |
7.0x1015 Wcm
|
6.0x1015 Wcm |
Film Thickness ; 10 µm |
| Dielectric constant |
3.6 |
3.6
|
3.6 |
Frequency ; 1 MHz |
| Dissipation factor |
0.028 |
0.029
|
0.030 |
| Thermal decomposition temperature |
267C (1% loss)
342C (5% loss) |
265C (1% loss)
340C (5% loss)
|
268C (1% loss)
345C (5% loss) |
TGA method
5C/min in Air |
Inter circuits insulation
(HAST) |
>1011 W |
>1011 W
|
>1011 W |
121C/85%RH/5V/200h
L/S=20/20µm |
| PCT resistance |
OK |
OK |
OK |
121C/100%RH/168h |
| |
Before Cure |
After Cure |
|
40µm |
 |
 |
Conditions
Substrate; Si wafer, Thickness; 3µm, Prebake; 110C/2min
(hot plate), Exposure; 200mJ/cm2 (g, h, i-line), PEB;
110C/2min (hot plate), Development; 60sec/2.38wt% TMAHaq.(23C),
spray paddle, Post bake; 190C/60min |
25µm
|
 |
 |
Conditions
Substrate; Si wafer, Thickness; 6µm, Prebake; 110C/3min
(hot plate), Exposure; 600mJ/cm2 (g, h, i-line), PEB;
110C/3min (hot plate), Development; 60sec/2.38wt% TMAHaq.(23C),
spray paddle, Post bake; 190C/60min |
20µm |
 |
 |
Conditions
Substrate; Si wafer, Thickness; 20µm, Prebake; 110C/3min
(hot plate), Exposure; 1,000mJ/cm2 (g, h, i-line), PEB;
110C/3min (hot plate), Development; 120sec/2.38wt% TMAHaq.(23C),
spray paddle, Post bake; 190C/60min |
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