• Low Activation Energy
• Great Process Window
• Good PEB sensitivity (<1 nm / °C)
• Improved Line Edge Roughness
• Good underexposure margin

SB – 110 °C, 90 sec

PEB Sensitivity<1.0nm/ °C

Process Conditions:
Film Thickness-260nm
PEB- Varied, 90 sec
Exposure- ASML/1100
Illumination- 0.75NA,2/3Ann (0.59/0.89)
Mask- 6% AttPSM
Development- 2.38% TMAH, 60 sec

Film Thickness- 260nm
SB/PEB- 110 °C / 110 °C, 90 sec
0.75NA, 2/3 Annular
Mask- 6% AttPSM