TOKYO, Calif.
November 29, 2004
TOKYO - Monday, November 29, 2004 - JSR Corporation announced today that it has successfully demonstrated 32nm line and space patterns using an ArF immersion lithography system and the company's high refractive index solution, developed based on its SOLOnX technology. Thirty-two
nanometers is commonly thought to be beyond the capability of water-based ArF immersion systems. JSR believes the introduction of a high refractive index (high n) liquid will extend ArF lithography over two technologies nodes.
Additional data will be presented at JSR Seminar 2004, held Friday, Dec. 3 at Hotel New Otani Makuhari.
"This unique material is designed in house using our internal expertise of the materials design," says Mitsunobu Koshiba, General Manager, Electronic Materials Division of JSR Corporation. "We believe this will be a commercially viable solution. SOLOnX technology will offer a highly transparent and low viscosity solution with an ideal refractive index of 1.64."
ArF Immersion lithography requires the inclusion of a liquid between the optical lens and wafer to achieve higher resolution performance. First generation immersion lithography systems use de-ionized water with a refractive index of 1.44 and should achieve 65nm line and space patterns.
JSR is developing new materials for advanced lithography technologies such as spin-on hardmask materials, top coating materials for immersion lithography and ArF resist for high NA dry and immersion exposure.
JSR will participate in SEMICON Japan, held in Makuhari, Chiba, on Dec. 1-3, 2004 and hosting its annual technical seminar on Friday, Dec. 3rd at Hotel New Otani Makuhari.
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